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15 10V 12 4V 6V 3V 3.5V
10
8
Vds=5V
Id (A)
9
6
Id(A)
6 Vgs=2.5V 125C 3 2 25C 4 0 0 2 3 4 Vds (Volts) Fig 1: On-Region Characteristics 1 5 0 0 0.5 1.5 2 2.5 3 Vgs(Volts) Figure 2: Transfer Characteristics 1 3.5
200 175 150
1.8 Vgs=4.5V
270
Id=3.5A
Normalized On-Resistance
1.6 1.4 1.2
Rds(on) (m:)
Vgs=2.5V
1.7 3.6
Vgs=10V Id=3.8A
125 100 75 50 25 0 0 2 4 6 8 10 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 Id=3.8A 90 80 Vgs=10V Vgs=4.5V
Vgs=2.5V Id=1A 1
0.8 0 25 50 75 100 125
150
13
175
Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00
Rds(on) (m:)
125C
1.0E-01
Is (A)
70 60 50 40 30 0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0
125C 25C
25C
0.2
0.4
0.6
0.8
1.0
1.2
Vsd (Volts) Figure 6: Body-Diode Characteristics
5 Vds=15V Id=3.8A 4
400 350
Capacitance (pF)
300 Ciss 250 200 150 100 50 Coss Crss
Vgs (Volts)
3
2
1
0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 Tj(max)=150C Ta=25C
0 0 5 10 15 20 25 Vds (Volts) Figure 8: Capacitance Characteristics 30
270
20 Tj(max)=150C Ta=25C
1.7 3.6
10.0
Id (Amps)
1ms 0.1s 10ms
Power (W)
Rds(on) limited
10Ps 100Ps
15
10
1.0 1s 10s DC 0.1 0.1 1 10 100 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
5
0 0.001
13
0.01
0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=90C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd 0.1 Ton T Single Pulse
0.01 0.00001
0.0001
0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
0.01
100
1000

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